FS300R17KE3
FS300R17KE3
Характеристики
Manufacturer
Infineon
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1700 V
Collector-Emitter Saturation Voltage
2.45 V
Configuration
Hex
Gate-Emitter Leakage Current
400 nA
Continuous Collector Current
375 A
Power Dissipation
1650 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module FS300R17KE3: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet
Характеристики
Manufacturer
Infineon
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1700 V
Collector-Emitter Saturation Voltage
2.45 V
Configuration
Hex
Gate-Emitter Leakage Current
400 nA
Continuous Collector Current
375 A
Power Dissipation
1650 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module FS300R17KE3: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet

