FS450R17OP4PBOSA1
FS450R17OP4PBOSA1
Характеристики
Manufacturer
Infineon
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1700 V
Collector-Emitter Saturation Voltage
1.95 V
Configuration
6-Pack
Gate-Emitter Leakage Current
400 nA
Continuous Collector Current
450 A
Power Dissipation
2400 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module FS450R17OP4PBOSA1: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet
Характеристики
Manufacturer
Infineon
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1700 V
Collector-Emitter Saturation Voltage
1.95 V
Configuration
6-Pack
Gate-Emitter Leakage Current
400 nA
Continuous Collector Current
450 A
Power Dissipation
2400 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module FS450R17OP4PBOSA1: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet