FS50R07W1E3B11ABOMA1
FS50R07W1E3B11ABOMA1
Характеристики
Manufacturer
Infineon
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
650 V
Collector-Emitter Saturation Voltage
1.7 V
Configuration
Single
Gate-Emitter Leakage Current
400 nA
Continuous Collector Current
70 A
Power Dissipation
205 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module FS50R07W1E3B11ABOMA1: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet
Характеристики
Manufacturer
Infineon
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
650 V
Collector-Emitter Saturation Voltage
1.7 V
Configuration
Single
Gate-Emitter Leakage Current
400 nA
Continuous Collector Current
70 A
Power Dissipation
205 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module FS50R07W1E3B11ABOMA1: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet