FS660R08A6P2FLBBPSA1
FS660R08A6P2FLBBPSA1
Характеристики
Manufacturer
Infineon
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
750 V
Collector-Emitter Saturation Voltage
1.1 V
Configuration
6-Pack
Gate-Emitter Leakage Current
400 nA
Continuous Collector Current
450 A
Power Dissipation
20 mW
Описание
Module insulated-gate bipolar transistor, IGBT-Module FS660R08A6P2FLBBPSA1: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet
Характеристики
Manufacturer
Infineon
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
750 V
Collector-Emitter Saturation Voltage
1.1 V
Configuration
6-Pack
Gate-Emitter Leakage Current
400 nA
Continuous Collector Current
450 A
Power Dissipation
20 mW
Описание
Module insulated-gate bipolar transistor, IGBT-Module FS660R08A6P2FLBBPSA1: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet