FS75R07U1E4
FS75R07U1E4
Характеристики
Manufacturer
Infineon
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
650 V
Collector-Emitter Saturation Voltage
1.55 V
Configuration
6-Pack
Gate-Emitter Leakage Current
100 nA
Continuous Collector Current
100 A
Power Dissipation
275 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module FS75R07U1E4: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet
Характеристики
Manufacturer
Infineon
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
650 V
Collector-Emitter Saturation Voltage
1.55 V
Configuration
6-Pack
Gate-Emitter Leakage Current
100 nA
Continuous Collector Current
100 A
Power Dissipation
275 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module FS75R07U1E4: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet