FS75R12KE3_B9
FS75R12KE3_B9
Характеристики
Manufacturer
Infineon
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
1.7 V
Configuration
IGBT-Inverter
Gate-Emitter Leakage Current
100 nA
Continuous Collector Current
105 A
Power Dissipation
355 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module FS75R12KE3_B9: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet
Характеристики
Manufacturer
Infineon
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
1.7 V
Configuration
IGBT-Inverter
Gate-Emitter Leakage Current
100 nA
Continuous Collector Current
105 A
Power Dissipation
355 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module FS75R12KE3_B9: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet