FSAM75SM60A
FSAM75SM60A
Характеристики
Manufacturer
ON Semiconductor
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
600 V
Collector-Emitter Saturation Voltage
2.4 V
Configuration
3-Phase
Gate-Emitter Leakage Current
250 uA
Continuous Collector Current
75 A
Power Dissipation
189 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module FSAM75SM60A: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet
Характеристики
Manufacturer
ON Semiconductor
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
600 V
Collector-Emitter Saturation Voltage
2.4 V
Configuration
3-Phase
Gate-Emitter Leakage Current
250 uA
Continuous Collector Current
75 A
Power Dissipation
189 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module FSAM75SM60A: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet