История:
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FZ400R12KE3B1
FZ400R12KE3B1
Характеристики
Manufacturer
Infineon
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1200 V
Configuration
Single Dual Collector Dual Emitter
Continuous Collector Current
650 A
Описание
Module insulated-gate bipolar transistor, IGBT-Module FZ400R12KE3B1: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet
Характеристики
Manufacturer
Infineon
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1200 V
Configuration
Single Dual Collector Dual Emitter
Continuous Collector Current
650 A
Описание
Module insulated-gate bipolar transistor, IGBT-Module FZ400R12KE3B1: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet