История:
TZ800N18KOFTIMHPSA1
S16B-SE-2B-PG21
2EDGKCM-5.08-02P
IXGH30N60C3D1
15EDGKNHG-3.5-04P
PASH-M12B-05P-MM-SL7001
PBSH-M12B-05P-MM-SL7001
MC68LK332GCEH16
2EDGKDHG-5.08-06P
15EDGKNHBM-3.5-04P
MCF51AC128CCFGE
PBSH-M12A-04P-MM-SL7001
T2800DG
PASH-M12B-05P-MM-SR7001
PB-M12B-05P-MM-SL7001
PBSH-M12A-08P-MM-SL7001
MCF51AC128CVFUE
PASH-M12A-04P-MM-SL7001
15EDGKNHBG-3.5-04P
2EDGKBM-7.5-03P
MCF51AG96CLH
PB-M12A-04P-MM-SL7001
PASH-M12A-08P-MM-SL7001
15EDGKNG-3.5-04P
PB-M12B-05P-MM-SR7001
FZ400R12KS4
FZ400R12KS4
Характеристики
Manufacturer
Infineon
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1200 V
Configuration
Single Dual Emitter
Continuous Collector Current
510 A
Описание
Module insulated-gate bipolar transistor, IGBT-Module FZ400R12KS4: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet
В наличии
Характеристики
Manufacturer
Infineon
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1200 V
Configuration
Single Dual Emitter
Continuous Collector Current
510 A
Описание
Module insulated-gate bipolar transistor, IGBT-Module FZ400R12KS4: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet