Главная Каталог Полупроводниковые приборы Транзисторы IGBT Modules https://www.infineon.com/export/sites/default/_images/product/power/igbt/IGBT-modules/Product-Image/Easy_1B.jpg_148935309.jpg

https://www.infineon.com/export/sites/default/_images/product/power/igbt/IGBT-modules/Product-Image/Easy_1B.jpg_148935309.jpg

Артикул:

FP10R12W1T4

Описание: https://www.infineon.com/export/sites/default/_images/product/power/igbt/IGBT-modules/Product-Image/Easy_1B.jpg_148935309.jpg

Datasheet:

Характеристики

Manufacturer Infineon

Product IGBT Silicon Modules

Collector- Emitter Voltage VCEO Max 1200 V

Configuration Array 7

Continuous Collector Current 20 A

Описание

Module insulated-gate bipolar transistor, IGBT-Module https://www.infineon.com/export/sites/default/_images/product/power/igbt/IGBT-Module modules/Product-Image/Easy_1B.jpg_148935309.jpg: Модуль биполярного транзистора с изолированным затвором

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Характеристики

Manufacturer Infineon

Product IGBT Silicon Modules

Collector- Emitter Voltage VCEO Max 1200 V

Configuration Array 7

Continuous Collector Current 20 A

Описание

Скачать datasheet

https://www.infineon.com/export/sites/default/_images/product/power/igbt/IGBT-modules/Product-Image/Easy_1B.jpg_148935309.jpg

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https://www.infineon.com/export/sites/default/_images/product/power/igbt/IGBT-modules/Product-Image/Easy_1B.jpg_148935309.jpg

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