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IXA20PG1200DHG-TUB
Характеристики
Manufacturer
IXYS
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
1.8 V
Configuration
Dual
Continuous Collector Current
32 A
Power Dissipation
130 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module IXA20PG1200DHG-TUB: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet
В наличии
Характеристики
Manufacturer
IXYS
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
1.8 V
Configuration
Dual
Continuous Collector Current
32 A
Power Dissipation
130 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module IXA20PG1200DHG-TUB: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet

