IXA20RG1200DHGLB-TRR
IXA20RG1200DHGLB-TRR
Характеристики
Manufacturer
IXYS
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
1.8 V
Configuration
Single
Gate-Emitter Leakage Current
500 nA
Continuous Collector Current
32 A
Power Dissipation
125 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module IXA20RG1200DHGLB-TRR: Модуль биполярного транзистора с изолированным затвором
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В наличии
Характеристики
Manufacturer
IXYS
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
1.8 V
Configuration
Single
Gate-Emitter Leakage Current
500 nA
Continuous Collector Current
32 A
Power Dissipation
125 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module IXA20RG1200DHGLB-TRR: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet