История:
2EDGKDA-5.08-02P
IXA30PG1200DHG-TRR
IXA30PG1200DHG-TRR
Характеристики
Manufacturer
IXYS
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
1.9 V
Configuration
Dual
Continuous Collector Current
43 A
Power Dissipation
150 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module IXA30PG1200DHG-TRR: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet
Характеристики
Manufacturer
IXYS
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
1.9 V
Configuration
Dual
Continuous Collector Current
43 A
Power Dissipation
150 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module IXA30PG1200DHG-TRR: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet

