IXA40PG1200DHGLB-TRR
IXA40PG1200DHGLB-TRR
Характеристики
Manufacturer
IXYS
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
1.85 V
Configuration
Dual
Gate-Emitter Leakage Current
200 nA
Continuous Collector Current
63 A
Power Dissipation
230 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module IXA40PG1200DHGLB-TRR: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet
В наличии
Характеристики
Manufacturer
IXYS
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
1.85 V
Configuration
Dual
Gate-Emitter Leakage Current
200 nA
Continuous Collector Current
63 A
Power Dissipation
230 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module IXA40PG1200DHGLB-TRR: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet

