История:
S16B-TEH-2B-M40
2026-09-C2
DG500A-5.08-04P
S16A-SEH-2B-PG16
S16B-SM-1L.M-M25
STGWT30V60DF
S32B-BM-2L.M
DEE-064-FC
5.0SMDJ18AS
MAX7424EUA T
HLS-03-SL
S16B-SM-1L.M-2M25-PC
S32B-SM-1L.M-M40
PXV1220S-9DBN6-T02
2026-15-C2FLF
MIXA600PF650TSF
LM239ADE4
MAX7403CSA T
S16B-SMH-4B-PG21
B614F-2
DG503-5.08-02P
STGWA40S120DF3
DG127A-5.08-04P
TPDV1225RG
S16B-SM-4B-2PG21
S16B-BM-2L.M
PXV1220S-8DBN6-T02
PI6C5946004ZHIEX
S16B-CC-2L.M-PG21
S32B-SM-1L.M-2M40
S16B-SM-1L.M-2M25
PI6C5946002ZHIEX
№ произв.
EC52/24/14-3C94-G1000
STGWA15S120DF3
S16A-TE-2B-PG16
D16A-BK-1L-CV
0154007.DR
TBU-PL060-100-WH
2026-20-C2FLF
IXGA24N120C3
IXA60IF1200NA
IXA60IF1200NA
Характеристики
Manufacturer
IXYS
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
1.8 V
Configuration
Single
Gate-Emitter Leakage Current
500 nA
Continuous Collector Current
88 A
Power Dissipation
290 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module IXA60IF1200NA: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet
В наличии
Характеристики
Manufacturer
IXYS
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
1.8 V
Configuration
Single
Gate-Emitter Leakage Current
500 nA
Continuous Collector Current
88 A
Power Dissipation
290 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module IXA60IF1200NA: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet