IXA70R1200NA
IXA70R1200NA
Характеристики
Manufacturer
IXYS
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
1.8 V
Configuration
Single
Gate-Emitter Leakage Current
500 nA
Continuous Collector Current
100 A
Power Dissipation
350 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module IXA70R1200NA: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet
Характеристики
Manufacturer
IXYS
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
1.8 V
Configuration
Single
Gate-Emitter Leakage Current
500 nA
Continuous Collector Current
100 A
Power Dissipation
350 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module IXA70R1200NA: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet