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IXGK55N120A3H1
IXGK55N120A3H1
Характеристики
Manufacturer
IXYS
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
1.85 V
Configuration
Single
Gate-Emitter Leakage Current
100 nA
Continuous Collector Current
125 A
Описание
Module insulated-gate bipolar transistor, IGBT-Module IXGK55N120A3H1: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet
В наличии
Характеристики
Manufacturer
IXYS
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
1.85 V
Configuration
Single
Gate-Emitter Leakage Current
100 nA
Continuous Collector Current
125 A
Описание
Module insulated-gate bipolar transistor, IGBT-Module IXGK55N120A3H1: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet