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IXGR6N170A
IXGR6N170A
Характеристики
Manufacturer
IXYS
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1700 V
Collector-Emitter Saturation Voltage
5.4 V
Configuration
Single
Gate-Emitter Leakage Current
100 nA
Continuous Collector Current
5.5 A
Описание
Module insulated-gate bipolar transistor, IGBT-Module IXGR6N170A: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet
В наличии
Характеристики
Manufacturer
IXYS
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1700 V
Collector-Emitter Saturation Voltage
5.4 V
Configuration
Single
Gate-Emitter Leakage Current
100 nA
Continuous Collector Current
5.5 A
Описание
Module insulated-gate bipolar transistor, IGBT-Module IXGR6N170A: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet