MG06400D-BN4MM
MG06400D-BN4MM
Характеристики
Manufacturer
Littelfuse
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
600 V
Collector-Emitter Saturation Voltage
1.95 V
Configuration
Dual
Gate-Emitter Leakage Current
1.2 uA
Continuous Collector Current
400 A
Power Dissipation
1400 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module MG06400D-BN4MM: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet
В наличии
Характеристики
Manufacturer
Littelfuse
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
600 V
Collector-Emitter Saturation Voltage
1.95 V
Configuration
Dual
Gate-Emitter Leakage Current
1.2 uA
Continuous Collector Current
400 A
Power Dissipation
1400 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module MG06400D-BN4MM: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet