MG12150D-BA1MM
MG12150D-BA1MM
Характеристики
Manufacturer
Littelfuse
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
1.8 V
Configuration
Dual
Gate-Emitter Leakage Current
200 nA
Continuous Collector Current
210 A
Power Dissipation
1100 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module MG12150D-BA1MM: Модуль биполярного транзистора с изолированным затвором
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В наличии
Характеристики
Manufacturer
Littelfuse
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
1.8 V
Configuration
Dual
Gate-Emitter Leakage Current
200 nA
Continuous Collector Current
210 A
Power Dissipation
1100 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module MG12150D-BA1MM: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet