MG1225H-XBN2MM
MG1225H-XBN2MM
Характеристики
Manufacturer
Littelfuse
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
1.9 V
Configuration
3-Phase Converter Brake Inverter
Gate-Emitter Leakage Current
400 nA
Continuous Collector Current
40 A
Power Dissipation
147 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module MG1225H-XBN2MM: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet
В наличии
Характеристики
Manufacturer
Littelfuse
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
1.9 V
Configuration
3-Phase Converter Brake Inverter
Gate-Emitter Leakage Current
400 nA
Continuous Collector Current
40 A
Power Dissipation
147 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module MG1225H-XBN2MM: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet