MG1275H-XN2MM
MG1275H-XN2MM
Характеристики
Manufacturer
Littelfuse
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
1.9 V
Configuration
3-Phase Inverter
Gate-Emitter Leakage Current
400 nA
Continuous Collector Current
105 A
Power Dissipation
348 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module MG1275H-XN2MM: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet
В наличии
Характеристики
Manufacturer
Littelfuse
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
1.9 V
Configuration
3-Phase Inverter
Gate-Emitter Leakage Current
400 nA
Continuous Collector Current
105 A
Power Dissipation
348 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module MG1275H-XN2MM: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet