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MG17300D-BN4MM
MG17300D-BN4MM
Характеристики
Manufacturer
Littelfuse
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1700 V
Collector-Emitter Saturation Voltage
2 V
Configuration
Half Bridge
Gate-Emitter Leakage Current
400 nA
Continuous Collector Current
400 A
Power Dissipation
1450 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module MG17300D-BN4MM: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet
В наличии
Характеристики
Manufacturer
Littelfuse
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1700 V
Collector-Emitter Saturation Voltage
2 V
Configuration
Half Bridge
Gate-Emitter Leakage Current
400 nA
Continuous Collector Current
400 A
Power Dissipation
1450 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module MG17300D-BN4MM: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet