История:
PM-MC-03P-FF-SR8B01-00A(H)
MIXA100W1200TEH
MIXA100W1200TEH
Характеристики
Manufacturer
IXYS
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
1.8 V
Configuration
6-Pack
Gate-Emitter Leakage Current
500 nA
Continuous Collector Current
155 A
Power Dissipation
500 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module MIXA100W1200TEH: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet
В наличии
Характеристики
Manufacturer
IXYS
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
1.8 V
Configuration
6-Pack
Gate-Emitter Leakage Current
500 nA
Continuous Collector Current
155 A
Power Dissipation
500 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module MIXA100W1200TEH: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet

