История:
R3-14C-01
PASH-M12A-03P-MM-SL7002
MIXA225RF1200TSF
MIXA225RF1200TSF
Характеристики
Manufacturer
IXYS
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
1.8 V
Configuration
Single
Gate-Emitter Leakage Current
1.5 uA
Continuous Collector Current
360 A
Power Dissipation
1.1 kW
Описание
Module insulated-gate bipolar transistor, IGBT-Module MIXA225RF1200TSF: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet
В наличии
Характеристики
Manufacturer
IXYS
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
1.8 V
Configuration
Single
Gate-Emitter Leakage Current
1.5 uA
Continuous Collector Current
360 A
Power Dissipation
1.1 kW
Описание
Module insulated-gate bipolar transistor, IGBT-Module MIXA225RF1200TSF: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet

