MIXA300PF1200TSF
MIXA300PF1200TSF
Характеристики
Manufacturer
IXYS
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
1.8 V
Configuration
IGBT-Inverter
Gate-Emitter Leakage Current
0.3 mA
Continuous Collector Current
465 A
Power Dissipation
1.5 kW
Описание
Module insulated-gate bipolar transistor, IGBT-Module MIXA300PF1200TSF: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet
В наличии
Характеристики
Manufacturer
IXYS
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
1.8 V
Configuration
IGBT-Inverter
Gate-Emitter Leakage Current
0.3 mA
Continuous Collector Current
465 A
Power Dissipation
1.5 kW
Описание
Module insulated-gate bipolar transistor, IGBT-Module MIXA300PF1200TSF: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet

