История:
TMS320DM6467CCUT4
S24B-BM-1L.M-PC
MIXA80R1200VA
MIXA80R1200VA
Характеристики
Manufacturer
IXYS
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
1.9 V
Configuration
Single
Gate-Emitter Leakage Current
500 nA
Continuous Collector Current
120 A
Power Dissipation
390 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module MIXA80R1200VA: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet
Характеристики
Manufacturer
IXYS
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
1.9 V
Configuration
Single
Gate-Emitter Leakage Current
500 nA
Continuous Collector Current
120 A
Power Dissipation
390 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module MIXA80R1200VA: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet

