История:
ATSAM3N00BA-AUR
ATSAM3N00BA-AU
ER51/10/38-3C92
MIXA80W1200TEH
MIXA80W1200TEH
Характеристики
Manufacturer
IXYS
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
1.8 V
Configuration
6-Pack
Gate-Emitter Leakage Current
500 nA
Continuous Collector Current
120 A
Power Dissipation
390 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module MIXA80W1200TEH: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet
Характеристики
Manufacturer
IXYS
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
1.8 V
Configuration
6-Pack
Gate-Emitter Leakage Current
500 nA
Continuous Collector Current
120 A
Power Dissipation
390 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module MIXA80W1200TEH: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet

