MIXA81WB1200TEH
MIXA81WB1200TEH
Характеристики
Manufacturer
IXYS
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
1.8 V
Configuration
6-Pack
Gate-Emitter Leakage Current
500 nA
Continuous Collector Current
90 A; 120 A
Power Dissipation
290 W; 390 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module MIXA81WB1200TEH: Модуль биполярного транзистора с изолированным затвором
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В наличии
Характеристики
Manufacturer
IXYS
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
1.8 V
Configuration
6-Pack
Gate-Emitter Leakage Current
500 nA
Continuous Collector Current
90 A; 120 A
Power Dissipation
290 W; 390 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module MIXA81WB1200TEH: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet