STGIB10CH60TS-E
STGIB10CH60TS-E
Характеристики
Manufacturer
STMicroelectronics
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
600 V
Collector-Emitter Saturation Voltage
1.5 V
Continuous Collector Current
15 A
Power Dissipation
66 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module STGIB10CH60TS-E: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet
В наличии
Характеристики
Manufacturer
STMicroelectronics
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
600 V
Collector-Emitter Saturation Voltage
1.5 V
Continuous Collector Current
15 A
Power Dissipation
66 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module STGIB10CH60TS-E: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet

