STGIB10CH60TS-L
STGIB10CH60TS-L
Характеристики
Manufacturer
STMicroelectronics
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
600 V
Collector-Emitter Saturation Voltage
1.6 V
Configuration
3-Phase Inverter
Continuous Collector Current
10 A
Power Dissipation
60 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module STGIB10CH60TS-L: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet
В наличии
Характеристики
Manufacturer
STMicroelectronics
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
600 V
Collector-Emitter Saturation Voltage
1.6 V
Configuration
3-Phase Inverter
Continuous Collector Current
10 A
Power Dissipation
60 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module STGIB10CH60TS-L: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet
