История:
BA82901YF-CE2
APT36GA60B
APT54GA60B
APT50GP60B2DQ2G
STGIB15CH60TS-E
STGIB15CH60TS-E
Характеристики
Manufacturer
STMicroelectronics
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
600 V
Collector-Emitter Saturation Voltage
1.6 V
Configuration
3-Phase Inverter
Continuous Collector Current
15 A
Power Dissipation
75 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module STGIB15CH60TS-E: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet
В наличии
Характеристики
Manufacturer
STMicroelectronics
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
600 V
Collector-Emitter Saturation Voltage
1.6 V
Configuration
3-Phase Inverter
Continuous Collector Current
15 A
Power Dissipation
75 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module STGIB15CH60TS-E: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet

