STGIB8CH60TS-E
STGIB8CH60TS-E
Характеристики
Manufacturer
STMicroelectronics
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
600 V
Collector-Emitter Saturation Voltage
1.91 V
Configuration
3-Phase
Continuous Collector Current
12 A
Power Dissipation
50 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module STGIB8CH60TS-E: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet
В наличии
Характеристики
Manufacturer
STMicroelectronics
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
600 V
Collector-Emitter Saturation Voltage
1.91 V
Configuration
3-Phase
Continuous Collector Current
12 A
Power Dissipation
50 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module STGIB8CH60TS-E: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet

