История:
SL23EP08SC-2
E55/28/21-3C90-G2500
STGIF10CH60TS-E
STGIF10CH60TS-E
Характеристики
Manufacturer
STMicroelectronics
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
600 V
Collector-Emitter Saturation Voltage
1.65 V
Configuration
3-Phase Inverter
Continuous Collector Current
15 A
Power Dissipation
33 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module STGIF10CH60TS-E: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet
Характеристики
Manufacturer
STMicroelectronics
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
600 V
Collector-Emitter Saturation Voltage
1.65 V
Configuration
3-Phase Inverter
Continuous Collector Current
15 A
Power Dissipation
33 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module STGIF10CH60TS-E: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet

