STGIPL14K60-S
STGIPL14K60-S
Характеристики
Manufacturer
STMicroelectronics
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
600 V
Collector-Emitter Saturation Voltage
2.1 V
Configuration
3-Phase Inverter
Continuous Collector Current
15 A
Power Dissipation
44 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module STGIPL14K60-S: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet
Характеристики
Manufacturer
STMicroelectronics
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
600 V
Collector-Emitter Saturation Voltage
2.1 V
Configuration
3-Phase Inverter
Continuous Collector Current
15 A
Power Dissipation
44 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module STGIPL14K60-S: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet