STGIPQ3H60T-HL
STGIPQ3H60T-HL
Характеристики
Manufacturer
STMicroelectronics
Product
IGBT Silicon Carbide Modules
Collector- Emitter Voltage VCEO Max
600 V
Collector-Emitter Saturation Voltage
2.15 V
Configuration
Half Bridge
Continuous Collector Current
3 A
Описание
Module insulated-gate bipolar transistor, IGBT-Module STGIPQ3H60T-HL: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet
В наличии
Характеристики
Manufacturer
STMicroelectronics
Product
IGBT Silicon Carbide Modules
Collector- Emitter Voltage VCEO Max
600 V
Collector-Emitter Saturation Voltage
2.15 V
Configuration
Half Bridge
Continuous Collector Current
3 A
Описание
Module insulated-gate bipolar transistor, IGBT-Module STGIPQ3H60T-HL: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet