История:
APTC60HM45T1G
FGHL50T65SQ
FGHL40S65UQ
5PB1108CMGK8
BD8/1.5/10-3C90
APT5010JLL
5PB1214CMGK8
LS1028ACN7NQA
TR2-S505SC-10-R
R3-14A2
96MPXE-2.0-27M36A
EFD12/6/3.5-3C90-S
EC41/19/12-3C91-G1000
TR2-S505SC-8-R
FGH75T65SQDNL4
FGH75T65SHDTLN4
E32/16/9-3C90-G500
NO.213-R
EC35/17/10-3C91-G200
EFD12/6/3.5-3C96-S
STGIPQ3H60T-HZ
STGIPQ3H60T-HZ
Характеристики
Manufacturer
STMicroelectronics
Product
IGBT Silicon Carbide Modules
Collector- Emitter Voltage VCEO Max
600 V
Collector-Emitter Saturation Voltage
2.15 V
Configuration
Half Bridge
Continuous Collector Current
3 A
Описание
Module insulated-gate bipolar transistor, IGBT-Module STGIPQ3H60T-HZ: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet
Характеристики
Manufacturer
STMicroelectronics
Product
IGBT Silicon Carbide Modules
Collector- Emitter Voltage VCEO Max
600 V
Collector-Emitter Saturation Voltage
2.15 V
Configuration
Half Bridge
Continuous Collector Current
3 A
Описание
Module insulated-gate bipolar transistor, IGBT-Module STGIPQ3H60T-HZ: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet