STGIPQ3HD60-HZ
STGIPQ3HD60-HZ
Характеристики
Manufacturer
STMicroelectronics
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
600 V
Collector-Emitter Saturation Voltage
2.15 V
Configuration
3-Phase Inverter
Continuous Collector Current
3 A
Power Dissipation
8 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module STGIPQ3HD60-HZ: Модуль биполярного транзистора с изолированным затвором
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В наличии
Характеристики
Manufacturer
STMicroelectronics
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
600 V
Collector-Emitter Saturation Voltage
2.15 V
Configuration
3-Phase Inverter
Continuous Collector Current
3 A
Power Dissipation
8 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module STGIPQ3HD60-HZ: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet