История:
ST10010B
LS1028AXN7KQA
LS1028ACE7NQA
LS1027AXE7PQA
STGIPQ5C60T-HZ
STGIPQ5C60T-HZ
Характеристики
Manufacturer
STMicroelectronics
Product
IGBT Silicon Carbide Modules
Collector- Emitter Voltage VCEO Max
600 V
Collector-Emitter Saturation Voltage
2.15 V
Configuration
Half Bridge
Continuous Collector Current
5 A
Описание
Module insulated-gate bipolar transistor, IGBT-Module STGIPQ5C60T-HZ: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet
Характеристики
Manufacturer
STMicroelectronics
Product
IGBT Silicon Carbide Modules
Collector- Emitter Voltage VCEO Max
600 V
Collector-Emitter Saturation Voltage
2.15 V
Configuration
Half Bridge
Continuous Collector Current
5 A
Описание
Module insulated-gate bipolar transistor, IGBT-Module STGIPQ5C60T-HZ: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet
