STGIPQ8C60T-HZ
STGIPQ8C60T-HZ
Характеристики
Manufacturer
STMicroelectronics
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
600 V
Collector-Emitter Saturation Voltage
2 V
Configuration
Half Bridge
Continuous Collector Current
8 A
Power Dissipation
19.2 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module STGIPQ8C60T-HZ: Модуль биполярного транзистора с изолированным затвором
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В наличии
Характеристики
Manufacturer
STMicroelectronics
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
600 V
Collector-Emitter Saturation Voltage
2 V
Configuration
Half Bridge
Continuous Collector Current
8 A
Power Dissipation
19.2 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module STGIPQ8C60T-HZ: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet