История:
D6B-SF-1L-CV-2PG16
STGIPS10C60
STGIPS10C60
Характеристики
Manufacturer
STMicroelectronics
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
600 V
Collector-Emitter Saturation Voltage
1.6 V
Configuration
3-Phase Inverter
Continuous Collector Current
10 A
Power Dissipation
33 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module STGIPS10C60: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet
Характеристики
Manufacturer
STMicroelectronics
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
600 V
Collector-Emitter Saturation Voltage
1.6 V
Configuration
3-Phase Inverter
Continuous Collector Current
10 A
Power Dissipation
33 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module STGIPS10C60: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet

