STGIPS10C60-H
STGIPS10C60-H
Характеристики
Manufacturer
STMicroelectronics
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
600 V
Collector-Emitter Saturation Voltage
1.6 V
Configuration
3-Phase Inverter
Continuous Collector Current
10 A
Power Dissipation
33 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module STGIPS10C60-H: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet
В наличии
Характеристики
Manufacturer
STMicroelectronics
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
600 V
Collector-Emitter Saturation Voltage
1.6 V
Configuration
3-Phase Inverter
Continuous Collector Current
10 A
Power Dissipation
33 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module STGIPS10C60-H: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet

