STGIPS10K60A2
STGIPS10K60A2
Характеристики
Manufacturer
STMicroelectronics
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
600 V
Collector-Emitter Saturation Voltage
2.1 V
Configuration
3-Phase
Continuous Collector Current
10 A
Power Dissipation
33 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module STGIPS10K60A2: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet
Характеристики
Manufacturer
STMicroelectronics
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
600 V
Collector-Emitter Saturation Voltage
2.1 V
Configuration
3-Phase
Continuous Collector Current
10 A
Power Dissipation
33 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module STGIPS10K60A2: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet