VS-100MT060WSP
VS-100MT060WSP
Характеристики
Manufacturer
Vishay
Collector- Emitter Voltage VCEO Max
600 V
Collector-Emitter Saturation Voltage
2.14 V
Configuration
Full Bridge
Gate-Emitter Leakage Current
200 nA
Continuous Collector Current
107 A
Power Dissipation
403 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module VS-100MT060WSP: Модуль биполярного транзистора с изолированным затвором
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В наличии
Характеристики
Manufacturer
Vishay
Collector- Emitter Voltage VCEO Max
600 V
Collector-Emitter Saturation Voltage
2.14 V
Configuration
Full Bridge
Gate-Emitter Leakage Current
200 nA
Continuous Collector Current
107 A
Power Dissipation
403 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module VS-100MT060WSP: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet