История:
AC0603FR-07110RL
MLS0805-4S7-601
APT75GP120J
VS-GB90SA120U
VS-GB90SA120U
Характеристики
Manufacturer
Vishay
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
3.3 V
Configuration
Single
Gate-Emitter Leakage Current
250 nA
Continuous Collector Current
149 A
Power Dissipation
862 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module VS-GB90SA120U: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet
Характеристики
Manufacturer
Vishay
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
3.3 V
Configuration
Single
Gate-Emitter Leakage Current
250 nA
Continuous Collector Current
149 A
Power Dissipation
862 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module VS-GB90SA120U: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet

