История:
YAT-9A
APT50GN120B2G
APT39M60J
BK/FHN31G1
BD8/1.5/10-3S1
VS-GB90SA120U
VS-GB90SA120U
Характеристики
Manufacturer
Vishay
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
3.3 V
Configuration
Single
Gate-Emitter Leakage Current
250 nA
Continuous Collector Current
149 A
Power Dissipation
862 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module VS-GB90SA120U: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet
В наличии
Характеристики
Manufacturer
Vishay
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
3.3 V
Configuration
Single
Gate-Emitter Leakage Current
250 nA
Continuous Collector Current
149 A
Power Dissipation
862 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module VS-GB90SA120U: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet

