VS-GT300FD060N
VS-GT300FD060N
Характеристики
Manufacturer
Vishay
Collector- Emitter Voltage VCEO Max
600 V
Collector-Emitter Saturation Voltage
1.72 V
Configuration
Half Bridge
Gate-Emitter Leakage Current
500 nA
Continuous Collector Current
379 A
Power Dissipation
1.25 kW
Описание
Module insulated-gate bipolar transistor, IGBT-Module VS-GT300FD060N: Модуль биполярного транзистора с изолированным затвором
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В наличии
Характеристики
Manufacturer
Vishay
Collector- Emitter Voltage VCEO Max
600 V
Collector-Emitter Saturation Voltage
1.72 V
Configuration
Half Bridge
Gate-Emitter Leakage Current
500 nA
Continuous Collector Current
379 A
Power Dissipation
1.25 kW
Описание
Module insulated-gate bipolar transistor, IGBT-Module VS-GT300FD060N: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet