Главная Каталог Полупроводниковые приборы Транзисторы IGBT Modules NXH160T120L2Q2F2SG

NXH160T120L2Q2F2SG

Name: NXH160T120L2Q2F2SG
Availability: OutOfStock

Артикул:

NXH160T120L2Q2F2SG

Описание: NXH160T120L2Q2F2SG

Datasheet:

Характеристики

Manufacturer ON Semiconductor

Product IGBT Silicon Modules

Collector- Emitter Voltage VCEO Max 600 V; 1200 V

Collector-Emitter Saturation Voltage 1.47 V; 2.15 V

Configuration Split-T

Gate-Emitter Leakage Current 300 nA; 500 nA

Continuous Collector Current 100 A; 160 A

Power Dissipation 500 W

Описание

Module insulated-gate bipolar transistor, IGBT-Module NXH160T120L2Q2F2SG: Модуль биполярного транзистора с изолированным затвором

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