История:
DG2000H-B-02P
WS2.5T-END-CO
TQ2SL-L2-3V-X
STGIPN3H60T-H
STGIPN3H60T-H
Характеристики
Manufacturer
STMicroelectronics
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
600 V
Collector-Emitter Saturation Voltage
2.15 V
Configuration
3-Phase Inverter
Continuous Collector Current
3 A
Power Dissipation
8 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module STGIPN3H60T-H: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet
Характеристики
Manufacturer
STMicroelectronics
Product
IGBT Silicon Modules
Collector- Emitter Voltage VCEO Max
600 V
Collector-Emitter Saturation Voltage
2.15 V
Configuration
3-Phase Inverter
Continuous Collector Current
3 A
Power Dissipation
8 W
Описание
Module insulated-gate bipolar transistor, IGBT-Module STGIPN3H60T-H: Модуль биполярного транзистора с изолированным затвором
Скачать datasheet

