История:
V68MLA1206NHAUTO
DDA123JU-7-F
Z0103NA0,412
101KH20-P7.5
SZHBL5006P2T5G
MLS0603-4S7-751
FP20R06YE3_B4
PLT58/38/4-3C92
BCR135SH6327XTSA1
5M240ZM100C5N
151KH20J-FP7.5
5M240ZT100C5N
5M240ZM100C4N
IXGX50N120C3H1
LSP10277PX3316
HGTG20N60B3D
V68ZA2PX2855
FGH75T65UPD-F085
RJH60F3DPQ-A0
QK008N5RP
Q4008DH4RP
ACTT4S-800C,118
Q4008DH3RP
121KH20J
STGIPNS3H60T-H
APT2X100DQ60J
122KN25
101KE14
QK010N4RP
P11/7-3D3
BCR16FM-14LB
LSP0600BJR-S
102KN25
P1300EALRP2
102KN20
Q4010NH5RP
APT30SM120JCU3
STGIPQ3HD60-HZ
V715ZC05P
APT2X60DQ100J
Биполярный транзистор - BJT
| Товар | Цена | Maximum Operating Temperature | Manufacturer | Package/Case | Transistor Polarity | Collector- Emitter Voltage VCEO Max | Collector- Base Voltage VCBO | Emitter- Base Voltage VEBO | Collector-Emitter Saturation Voltage | Gain Bandwidth Product fT | Pd - Power Dissipation | Minimum Operating Temperature | Brand | Configuration | Continuous Collector Current | DC Collector/Base Gain hFE Min | DC Current Gain hFE Max | Factory Pack Quantity | Height | Length | Maximum DC Collector Current | Mounting Style | Packaging | Product Category | Product Type | Qualification | RoHS | Series | Subcategory | Technology | Unit Weight | Width | |
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поиск предложений
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Diodes Incorporated | Diodes Incorporated | 2500 | Reel | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Transistors | |||||||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | DPAK-3 | NPN | 45 V | 60 V | 5 V | 240 mV | 150 MHz | 3.9 W | - 55 C | |||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | DPAK-3 | NPN | 45 V | 60 V | 5 V | 240 mV | 150 MHz | 3900 mW | - 55 C | Diodes Incorporated | Single | 3 A | 500 at 100 mA, 2 V, 400 at 1 A, 2 V, 150 at 2 A, 2 V, 60 at 3 A, 2 V | 500 at 100 mA, 2 V | 2500 | 2.39 mm | 6.73 mm | 3 A | SMD/SMT | Reel | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Details | ZXT690 | Transistors | Si | 260,400 mg | 6.22 mm | ||
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поиск предложений
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+ 150 C | Diodes Incorporated | DPAK-3 | PNP | - 40 V | - 50 V | - 5 V | - 260 mV | 100 MHz | 3.9 W | - 55 C | |||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | DPAK-3 | NPN | 30 V | 80 V | 7 V | 230 mV | 100 MHz | 4.2 W | - 55 C | |||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | DPAK-3 | NPN | 30 V | 80 V | 7 V | 230 mV | 100 MHz | 4200 mW | - 55 C | Diodes Incorporated | Single | 7 A | 2500 | 2.39 mm | 6.73 mm | 7 A | SMD/SMT | Reel | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Details | ZXT849 | Transistors | Si | 350 mg | 6.22 mm | ||||
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поиск предложений
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+ 150 C | Diodes Incorporated | DPAK-3 | PNP | 60 V | - 100 V | - 7 V | 120 MHz | 4.2 W | - 55 C | ||||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | DPAK-3 | PNP | - 100 V | 140 V | - 7 V | - 335 mV | 125 MHz | 4.2 W | - 55 C | |||||||||||||||||||||
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поиск предложений
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Diodes Incorporated | Diodes Incorporated | 3000 | Reel | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | AEC-Q101 | Details | ZXTC2045 | Transistors | Si | |||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-26-6 | NPN, PNP | 30 V | 40 V | 7 V | 1.7 W | - 55 C | |||||||||||||||||||||||
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поиск предложений
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-26-6 | NPN, PNP | 12 V | 12 V, 20 V | 7 V | 260 MHz, 310 MHz | 1.7 W | - 55 C | ||||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-26-6 | NPN, PNP | 20 V | 25 V, 100 V | 7 V | 215 MHz, 290 MHz | 1.7 W | - 55 C | ||||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-26-6 | NPN, PNP | 40 V | 45 V, 150 V | 7 V | 190 MHz, 270 MHz | 1.7 W | - 55 C | ||||||||||||||||||||||
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поиск предложений
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поиск предложений
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Diodes Incorporated | Diodes Incorporated | 3000 | Reel | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Transistors | |||||||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-23-6 | NPN | 50 V | 50 V | 5 V | 160 mV | 215 MHz | 900 mW | - 55 C | |||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-23-6 | NPN, PNP | 60 V | 80 V | - 5 V | 150 MHz | 1.7 W | - 55 C | ||||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-23-6 | NPN, PNP | 60 V | 80 V | - 5 V | 150 MHz | 1700 mW | - 55 C | Diodes Incorporated | Dual | 3000 | 1.3 mm | 3 mm | 1 A | SMD/SMT | Reel | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Details | ZXTD4591 | Transistors | Si | 6,500 mg | 1.75 mm | ||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | DFN3020B-8 | NPN | 15 V | 40 V | 7 V | 940 mV | 120 MHz | 1.5 W | - 55 C | |||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | DFN3020B-8 | NPN | 20 V | 40 V | 7 V | 8 mV | 140 MHz | 1.5 W | - 55 C | |||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | DFN3020B-8 | NPN | 50 V | 100 V | 7 V | 270 mV | 165 MHz | 2.45 W | - 55 C | |||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-26-6 | NPN, PNP | 12 V to 15 V | 15 V, 12 V | 7 V | 16.5 mV | 180 MHz | 1.7 W | - 55 C | Diodes Incorporated | Dual | 1.5 A, 1.25 A | 30 | 450 | 3000 | 5 A, 3 A | SMD/SMT | Reel | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | AEC-Q101 | Details | Transistors | Si | 15 mg | |||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-23-6 | NPN, PNP | 12 V, 15 V | 12 V, 15 V | - 5 V | 180 MHz, 220 MHz | 1.7 W | - 55 C | ||||||||||||||||||||||
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поиск предложений
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Diodes Incorporated | PNP | Diodes Incorporated | 3000 | Reel | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Details | ZXTD717 | Transistors | Si |
