Bipolar Transistors - BJT
| Товар | Цена | Maximum Operating Temperature | Manufacturer | Package/Case | Transistor Polarity | Collector- Emitter Voltage VCEO Max | Collector- Base Voltage VCBO | Emitter- Base Voltage VEBO | Collector-Emitter Saturation Voltage | Gain Bandwidth Product fT | Pd - Power Dissipation | Minimum Operating Temperature | Brand | Configuration | Continuous Collector Current | DC Collector/Base Gain hFE Min | DC Current Gain hFE Max | Factory Pack Quantity | Height | Length | Maximum DC Collector Current | Mounting Style | Packaging | Product Category | Product Type | Qualification | RoHS | Series | Subcategory | Technology | Unit Weight | Width | |
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-363-6 | PNP | - 25 V | - 25 V | - 4 V | - 0.4 V | 250 MHz | 200 mW | - 55 C | |||||||||||||||||||||
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поиск предложений
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Diodes Incorporated | SOT-363-6 | NPN, PNP | 25 V | 30 V | 5 V | 300 MHz | 200 mW | ||||||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-363-6 | NPN | 40 V | 60 V | 6 V | 0.75 V | 250 MHz | 200 mW | - 55 C | |||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-363-6 | PNP | - 40 V | - 40 V | - 5 V | - 0.75 V | 200 MHz | 200 mW | - 55 C | |||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-363-6 | PNP | - 40 V | - 40 V | - 5 V | - 0.75 V | 200 MHz | 200 mW | - 55 C | Diodes Incorporated | Dual | - 0.6 A | 300 | 3000 | 1 mm | 2.2 mm | 0.6 A | SMD/SMT | Reel | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Details | MMDT44 | Transistors | Si | 6 mg | 1.35 mm | |||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-363-6 | PNP | - 150 V | - 160 V | - 5 V | - 0.5 V | 300 MHz | 200 mW | - 55 C | |||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-363-6 | PNP | - 150 V | - 160 V | - 5 V | 0.2 V | 300 MHz | 200 mW | - 55 C | |||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-363-6 | NPN | 160 V | 180 V | 6 V | 0.2 V | 300 MHz | 200 mW | - 55 C | |||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-26-6 | NPN | 80 V | 80 V | 4 V | 0.25 V | 163 MHz | 1.28 W | - 55 C | |||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-26-6 | NPN | 80 V | 80 V | 4 V | 0.25 V | 163 MHz | 1.28 W | - 55 C | Diodes Incorporated | Dual | 3000 | 1 A | SMD/SMT | Reel | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | Details | MMDTA | Transistors | Si | 15 mg | ||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-26-6 | NPN | 300 V | 300 V | 6 V | 50 MHz | 300 mW | - 55 C | ||||||||||||||||||||||
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поиск предложений
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+ 150 C | ON Semiconductor / Fairchild | SOIC-16 | NPN | 40 V | 75 V | 5 V | 300 MHz | 1 W | - 55 C | ||||||||||||||||||||||
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поиск предложений
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+ 150 C | ON Semiconductor / Fairchild | SOIC-16 | PNP | - 60 V | - 60 V | - 5 V | - 1.6 V | 250 MHz | 1 W | - 55 C | |||||||||||||||||||||
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поиск предложений
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+ 150 C | ON Semiconductor / Fairchild | SOIC-16 | NPN | 40 V | 60 V | 6 V | 250 MHz | 1 W | - 55 C | ||||||||||||||||||||||
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поиск предложений
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+ 150 C | ON Semiconductor / Fairchild | SOIC-16 | PNP | - 40 V | - 40 V | - 5 V | - 400 mV | 200 MHz | 1 W | - 55 C | |||||||||||||||||||||
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поиск предложений
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+ 150 C | ON Semiconductor / Fairchild | SOIC-16 | NPN, PNP | 40 V | 40 V | 5 V | 200 MHz | 1 W | - 55 C | ||||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-323-3 | NPN | 40 V | 75 V | 6 V | 1 V | 300 MHz | 200 mW | - 55 C | |||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-323-3 | PNP | - 60 V | - 60 V | - 5 V | - 1.6 V | 200 MHz | 200 mW | - 55 C | |||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-323-3 | PNP | - 60 V | - 60 V | - 5 V | - 1.6 V | 200 MHz | 200 mW | - 55 C | Diodes Incorporated | Single | - 600 mA | 50 | 3000 | - 600 mA | SMD/SMT | Reel | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | AEC-Q101 | Details | Transistors | Si | 6 mg | ||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-323-3 | NPN | 40 V | 60 V | 6 V | 0.3 V | 300 MHz | 200 mW | - 55 C | |||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-323-3 | NPN | 40 V | 60 V | 6 V | 0.3 V | 300 MHz | 200 mW | - 55 C | |||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-323-3 | NPN | 40 V | 60 V | 6 V | 0.3 V | 300 MHz | 200 mW | - 55 C | Diodes Incorporated | Single | 200 mA | 400 | 3000 | SMD/SMT | Reel | Bipolar Transistors - BJT | BJTs - Bipolar Transistors | AEC-Q101 | Details | MMST3904 | Transistors | Si | 5 mg | ||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-323-3 | PNP | - 40 V | - 40 V | - 5 V | - 0.3 V | 300 MHz | 200 mW | - 55 C | |||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-323-3 | NPN | 40 V | 60 V | 6 V | 250 MHz | 200 mW | - 55 C | ||||||||||||||||||||||
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поиск предложений
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+ 150 C | Diodes Incorporated | SOT-323-3 | PNP | 40 V | 40 V | 5 V | 200 MHz | 200 mW | - 55 C |
